Tft-lcd assembly substrate, liquid crystal display and method of manufacturing the same

ABSTRACT

A TFT-LCD assembly substrate comprises an array structure layer, comprising a plurality of first signal lines and a plurality of second signal lines. Adjacent first signal lines and adjacent second signal lines cross each other to define a plurality of combination pixel regions, and each of the combination pixel regions comprises two pixel regions juxtaposed along a direction of the first signal line, and there are a thin film transistor and a pixel electrode formed in one pixel region of the two pixel regions and there is a common electrode formed in the other pixel region.

BACKGROUND

Embodiments of the present invention relate to a thin film transistorliquid crystal display (TFT-LCD) assembly substrate, a liquid crystaldisplay and a method of manufacturing the same.

Thin film transistor liquid crystal displays (TFT-LCDs) have theadvantages of small volume, low energy consumption, low radiation andthe like, and thus have prevailed in the flat plate display market. Themain structure of a liquid crystal display comprises an array substrateand a color filter substrate assembled together with a liquid crystalinterposed therebetween. The color filter substrate comprises red (R),green (G) and blue (B) color filters in a matrix and a common electrode;and the array substrate comprises gate lines and data lines formedthereon, and the gate lines and the data lines are perpendicular to eachother to define pixel regions, and in each pixel region, a thin filmtransistor (TFT) and a pixel electrode are provided.

With regarding to the liquid crystal display configured as mentionedabove, one of the main disadvantages thereof is in that the apertureratio is relatively small. Because the ratio of the area of the gateline and the data line that account for the entire area of the substrateis relatively large, the width of the gate line and the data line arethe important factors that limit the aperture ratio of a TFT-LCD.

SUMMARY

An embodiment of the present invention provides a TFT-LCD assemblysubstrate, comprising an array structure layer, comprising: a pluralityof first signal lines; and a plurality of second signal lines, whereinadjacent first signal lines and adjacent second signal lines cross eachother to define a plurality of combination pixel regions, and each ofthe combination pixel regions comprises two pixel regions juxtaposedalong a direction of the first signal line, and there are a thin filmtransistor and a pixel electrode formed in one pixel region of the twopixel regions and there is a common electrode formed in the other pixelregion.

Another embodiment of the present invention further provides a method ofmanufacturing a TFT-LCD assembly substrate, comprising: Step 1, formingan array structure layer on a substrate, comprising forming a pluralityof first signal lines, a plurality of second signal lines and aplurality of thin film transistors, and adjacent first signal lines andadjacent second signal lines cross each other to define a plurality ofcombination pixel regions, and each of the combination pixel regionscomprises two pixel regions juxtaposed along a direction of the firstsignal line; and Step 2, forming a pixel electrode and a commonelectrode for each combination pixel region, wherein the pixel electrodeis positioned in the same one pixel region as one of the thin filmtransistors and connected with one of a drain electrode and a sourceelectrode of the thin film transistor, and the common electrode ispositioned in the other pixel region.

Still another embodiment of the present invention further provides aliquid crystal display, comprising: a first thin film transistor liquidcrystal display (TFT-LCD) assembly substrate and a second TFT-LCDassembly substrate that are assembled together, wherein the firstTFT-LCD assembly substrate comprises: an array structure layer, whereinthe array structure layer comprises a plurality of first signal linesand a plurality of second signal lines, and adjacent the first signallines and adjacent the second signal lines cross each other to define aplurality of combination pixel regions, and each of the combinationpixel regions comprises two pixel regions juxtaposed along a directionof the first signal line, and there are a thin film transistor and apixel electrode formed in one pixel region of the two pixel regions andthere is a common electrode formed in the other pixel region; and thesecond TFT-LCD assembly substrate comprises: a color filter structurelayer; and an array structure layer, wherein the color filter structurelayer comprises a color filter unit, and the array structure layercomprises a plurality of third signal lines and a plurality of fourthsignal lines, and adjacent the third signal lines and adjacent thefourth signal line cross each other to define a plurality of combinationpixel regions, and each of the combination pixel regions comprises twopixel regions juxtaposed along a direction of the third signal line, andthere are a thin film transistor and a pixel electrode formed in onepixel region of the two pixel regions and there is a common electrodeformed in the other pixel region; and wherein the first signal lines andthe third signal lines, the second signal lines and the fourth signallines, the first pixel electrodes and the second common electrodes, thefirst common electrodes and the second pixel electrodes are disposedopposite to each other, respectively.

Further scope of applicability of the present invention will becomeapparent from the detailed description given hereinafter. However, itshould be understood that the detailed description and specificexamples, while indicating preferred embodiments of the invention, aregiven by way of illustration only, since various changes andmodifications within the spirit and scope of the invention will becomeapparent to those skilled in the art from the following detaileddescription.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from thedetailed description given hereinafter and the accompanying drawingswhich are given by way of illustration only, and thus are not limitativeof the present invention and wherein:

FIG. 1 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a first embodiment of the presentinvention;

FIG. 2 is a sectional view taken along line A1-A1 in FIG. 1;

FIG. 3 is a sectional view taken along line B1-B1 in FIG. 1;

FIG. 4 is a plan view showing a second TFT-LCD assembly substrate in theliquid crystal display according to the first embodiment of the presentinvention;

FIG. 5 is a sectional view taken alone line C1-C1 in FIG. 4;

FIG. 6 is a sectional view taken alone line D1-D1 in FIG. 4;

FIG. 7 is a plan view after a first patterning process of the firstTFT-LCD assembly substrate in the liquid crystal display according tothe first embodiment of the present invention;

FIG. 8 is a sectional view taken along line A2-A2 in FIG. 7;

FIG. 9 is a plan view after a second patterning process of the firstTFT-LCD assembly substrate in the liquid crystal display according tothe first embodiment of the present invention;

FIG. 10 is a sectional view taken along line A3-A3 in FIG. 9;

FIG. 11 is a sectional view taken along line B3-B3 in FIG. 9;

FIG. 12 is a plan view after a third patterning process of the firstTFT-LCD assembly substrate in the liquid crystal display according tothe first embodiment of the present invention;

FIG. 13 is a sectional view taken along line A4-A4 in FIG. 12;

FIG. 14 is a sectional view taken along line B4-B4 in FIG. 12;

FIG. 15 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a second embodiment of the presentinvention;

FIG. 16 is a plan view showing a second TFT-LCD assembly substrate inthe liquid crystal display according to the second embodiment of thepresent invention;

FIG. 17 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a third embodiment of the presentinvention;

FIG. 18 is a sectional view taken along line E1-E1 in FIG. 17;

FIG. 19 is a plan view showing a second TFT-LCD assembly substrate inthe liquid crystal display according to the third embodiment of thepresent invention;

FIG. 20 is a sectional view taken along line F1-F1 in FIG. 19;

FIG. 21 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a fourth embodiment of the presentinvention;

FIG. 22 is a sectional view taken along line G1-G1 in FIG. 21;

FIG. 23 is a plan view showing a second TFT-LCD assembly substrate inthe liquid crystal display according to the fourth embodiment of thepresent invention; and

FIG. 24 is a sectional view taken along line H1-H1 in FIG. 23.

DETAILED DESCRIPTION

Hereinafter, embodiments of the invention will be described in detailwith the accompanying drawings.

The main structure of a liquid crystal display according to theembodiments of the present invention comprises a first TFT-LCD assemblysubstrate and a second TFT-LCD assembly substrate assembled togetherwith a liquid crystal interposed therebetween.

FIG. 1 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a first embodiment of the presentinvention, and FIG. 2 is a sectional view taken along line A1-A1 in FIG.1 and FIG. 3 is a sectional view taken along line B1-B1 in FIG. 1.

As shown in FIGS. 1 to 3, the first TFT-LCD assembly substrate comprisesa plurality of first gate lines 11, a plurality of first data lines 12and a plurality of first shield lines 13, which are all formed on afirst substrate 1. The first shield line 13 s are parallel to the firstdata lines 12 and each positioned between two adjacent first data lines12. Two adjacent first gate lines 11 and two adjacent first data lines12 cross each other to define combination pixel regions. Eachcombination pixel region is divided by one first shield line 13 into twopixel regions juxtaposed along a transverse direction: a first pixelregion and a second pixel region. There are a first thin film transistor14 and a first pixel electrode 15 formed as the array structure patternwithin the first pixel region, and there is a first common electrode 16provided within the second pixel region. The first gate line 11 is usedto provide a turn-on (“ON”) signal for the first thin film transistor14, and the first data line 12 is used to provide data signals for thefirst pixel electrode 15, and the first common electrode 16 is used toprovide a common voltage signal, and the first shield line 13 functionslike a black matrix for shielding a gap between the first pixelelectrode 15 and the first common electrode 16. The width of the firstshield line 13 may be set to be equal to that of the first data line 12.In the case where the pixel regions are classified into odd columns ofpixel regions and even columns of pixel regions, the first pixel regionof the first TFT-LCD assembly substrate according to the presentembodiment is, for example, located in an odd column and the secondpixel region is, for example, located in an even column, that is, thefirst thin film transistor 14 and the first pixel electrode 15 areformed within an odd column of pixel regions, and the first commonelectrode 16 is formed within an even column of pixel regions.

Specifically, the first thin film transistor 14 comprises a first gateelectrode, a first active layer, a first source electrode 34 and a firstdrain electrode 35, and a portion of the first gate line 11 is used asthe first gate electrode of the first thin film transistor and the firstgate line 11 is formed on the first substrate 1; a gate insulating layer31 is formed on the first gate line 11 to cover the entirety of thefirst substrate 1, and the first active layer (comprises a semiconductorlayer 32 and a doped semiconductor layer 33) is formed on the gateinsulating layer 31 and positioned over the portion of the first gateline 11 used as the first gate electrode; the first source electrode 34and the first drain electrode 35 are fowled on the first active layer;one end of the first source electrode 34 is located above the first gateline 11 and the other end thereof is connected with the first data line12; one end of the first drain electrode 35 is positioned above thefirst gate line 11 and the other end thereof is connected with the firstpixel electrode 15; a first TFT channel region is formed between thefirst source electrode 34 and the first drain electrode 35, and thedoped semiconductor layer 33 in the first TFT channel region is etchedaway and the semiconductor layer 32 therein is partially etched away ina thickness direction, so that the semiconductor layer 32 of the firstTFT channel region is exposed; the first shield line 13 is disposed inthe same layer as the first data line 12 and positioned between twoadjacent first data lines 12 and divides one combination pixel regioninto a first pixel region and a second pixel region; a passivation layer36 is formed on the first data line 12, the first shield line 13, thefirst source electrode 34 and the first drain electrode 35 to cover theentirety of the first substrate 1, and a first passivation layer viahole 37 is formed in the passivation layer 36 at the position of thefirst drain electrode 35; the first pixel electrode 15 is formed withinthe first pixel region, and the first pixel electrode 15 is connected tothe first drain electrode 35 through the first passivation layer viahole 37; an edge of the first pixel electrode 35 is superposed on thefirst shield line 13 so that the first pixel electrode 15 overlaps thefirst shield line 13 and thus the light leakage at the edge of the firstpixel electrode 15 can be prevented, and further the first pixelelectrode and the first shield line can constitute storage capacitor;and the first common electrode 16 is formed in the second pixel regionadjacent to the first pixel region, and the first common electrodes 16located in the same column are connected to each other.

FIG. 4 is a plan view showing a second TFT-LCD assembly substrate in theliquid crystal display according to the first embodiment of the presentinvention; FIG. 5 is a sectional view taken alone line C1-C1 in FIG. 4;and FIG. 6 is a sectional view taken alone line D1-D1 in FIG. 4.

As shown in FIGS. 4 to 6, the main structure of the second TFT-LCDassembly substrate comprises a color filter structure layer and an arraystructure layer. The color filter structure layer comprises a colorfilter pattern 3 and a first black matrix 4, which are all formed on asecond substrate 2. The color filter pattern 3 comprises red colorfilter pattern, green color filter pattern and blue color filter patternin a matrix. The first black matrix 4 is disposed to correspond to asecond data line 22, and in particularly, the first black matrix 4 ispositioned below the second data line 22. The array structure layercomprises a plurality of second gate lines 21, a plurality of seconddata lines 22 and a plurality of second shield lines 23, which are allformed on the color filter structure layer. The second shield lines 23are parallel to the second data lines 22 and each positioned between twoadjacent second data lines 22. Two adjacent second gate lines 21 and twoadjacent second data lines 22 cross each other to define a plurality ofcombination pixel regions. Each combination pixel region is divided byone second shield line 23 into two pixel regions juxtaposed along atransverse direction: a third pixel region and a fourth pixel region.There is a second common electrode 26 formed within the third pixelregion, and there are a second thin film transistor 24 and a secondpixel electrode 25 formed as the array structure pattern within thefourth pixel region. The second gate line 21 is used to provide aturn-on signal for the second thin film transistor 24, the second dataline 22 is used to provide data signals for the second pixel electrode25, the second common electrode 26 is used to provide a common voltagesignal, and the second shield line 23 functions like a black matrix forshielding a gap between the second pixel electrode 25 and the secondcommon electrode 26. The width of the second shield line 23 may be setto be equal to that of the second data line 22. In the case where thepixel regions are classified into odd columns of pixel regions and evencolumns of pixel regions, the third pixel region of the second TFT-LCDassembly substrate according to the present embodiment is, for example,located in an odd column and the fourth pixel region is, for example,located in an even column, that is, the second common electrode 26 isformed within an odd column of pixel regions and the second thin filmtransistor 24 and the second pixel electrode 25 are formed within aneven column of pixel regions.

Specifically, the color filter pattern 3 and the first black matrix 4are formed on the second substrate 2; the second thin film transistor 24comprises a second gate electrode, a second active layer, a secondsource electrode 44 and a second drain electrode 45, and a portion ofthe second gate line 21 acts as the second gate electrode of the secondthin film transistor and the second gate line 21 is formed on the colorfilter pattern 3; a gate insulating layer 41 is formed on the secondgate line 21 to cover the entirety of the second substrate 2, and thesecond active layer (comprises a semiconductor layer 42 and a dopedsemiconductor layer 43) is formed on the gate insulating layer 41 andpositioned over the portion of the second gate line 21 acting as thesecond gate electrode; the second source electrode 44 and the seconddrain electrode 45 are formed on the second active layer; one end of thesecond source electrode 44 is positioned above the second gate line 21and the other end thereof is connected with the second data line 22; oneend of the second drain electrode 45 is positioned above the second gateline 21 and the other end thereof is connected with the second pixelelectrode 25; a second TFT channel region is formed between the secondsource electrode 44 and the second drain electrode 45, and the dopedsemiconductor layer 43 of the second TFT channel region is etched awayand the semiconductor layer 42 is partially etched away in a thicknessdirection, so that the semiconductor layer 42 of the second TFT channelregion is exposed; the second shield line 23 is disposed in the samelayer as the second data line 22 and positioned between two adjacentsecond data lines 22 and divides one combination pixel region into athird pixel region and a fourth pixel region; a passivation layer 46 isformed on the second data line 22, the second shield line 23, the secondsource electrode 44 and the second drain electrode 45 to cover theentirety of the second substrate 2, and is provided with a secondpassivation layer via hole 47 at the position of the second drainelectrode 45; the second pixel electrode 25 is formed within the fourthpixel region, and the second pixel electrode 25 is connected with thesecond drain electrode 45 through the second passivation layer via hole47; an edge of the second pixel electrode 25 is superposed on the secondshield line 23 so that the second pixel electrode 25 overlaps the secondshield line 23, and thus, the light leakage at the edge of the secondpixel electrode can be prevented, and further the second pixel electrodeand the second shield line can constitute storage capacitor; and thesecond common electrode 26 is formed in the third pixel region adjacentto the fourth pixel region, and the second common electrodes 26positioned in the same column are connected to each other.

In the liquid crystal display according to the present embodiment, afterthe first TFT-LCD assembly substrate and the second TFT-LCD assemblysubstrate are assembled together, the first gate lines 11 on the firstTFT-LCD assembly substrate are disposed opposite to the second gatelines 21 on the second TFT-LCD assembly substrate; the first data lines12 on the first TFT-LCD assembly substrate are disposed opposite to thesecond data lines 22 on the second TFT-LCD assembly substrate; the firstshield lines 13 on the first TFT-LCD assembly substrate are disposedopposite to the second shield lines 23 on the second TFT-LCD assemblysubstrate; the first pixel regions on the first TFT-LCD assemblysubstrate correspond to the third pixel regions on the second TFT-LCDassembly substrate, so that the array structure pattern on the firstTFT-LCD assembly substrate corresponds to the common electrode patternon the second TFT-LCD assembly substrate, that is, the first pixelelectrodes 15 on the first TFT-LCD assembly substrate are disposedopposite to the second common electrodes 26 on the second TFT-LCDassembly substrate; the second pixel regions on the first TFT-LCDassembly substrate correspond to the fourth pixel regions on the secondTFT-LCD assembly substrate, so that the common electrode pattern on thefirst TFT-LCD assembly substrate correspond to the array structurepattern on the second TFT-LCD assembly substrate, that is, the firstcommon electrodes 16 on the first TFT-LCD assembly substrate is disposedopposite to the second pixel electrodes 25 on the second TFT-LCDassembly substrate.

As can be seen from the above structure, in the liquid crystal displayof embodiments of the present invention, by providing both the arraystructure pattern and the common electrode pattern on each of twoTFT-LCD assembly substrates and by assembling together the two TFT-LCDassembly substrates so that the array structure patterns on the twoTFT-LCD assembly substrates are opposite to each other but the arraystructure pattern on one TFT-LCD assembly substrate corresponds to thecommon electrode pattern on the other TFT-LCD assembly substrate,forming a liquid crystal display.

Hereinafter, the solution of the present embodiment will be furtherdescribed with reference to the manufacturing process of the TFT-LCDassembly substrate. In the following description, a patterning processin the embodiment of the present invention can comprise applying ofphotoresist, exposing and developing of photoresist, etching with aphotoresist pattern, and removing remaining photoresist and the like.

FIG. 7 is a plan view after a first patterning process of the firstTFT-LCD assembly substrate in the liquid crystal display according tothe first embodiment of the present invention, showing the structure ofseveral pixel regions, and FIG. 8 is a sectional view taken along lineA2-A2 in FIG. 7. Firstly, a gate metal thin film is deposited on thefirst substrate (such as a glass substrate or a quartz substrate) 1 by amagnetron sputtering method or a thermal evaporation method, and thegate metal thin film may be a single-layer thin film of Al, Cr, W, Ta,Ti or AlNi, or composite multilayer thin film formed by the abovesingle-layer thin films. The gate metal thin film is patterned by usinga normal mask, and then the first gate lines 1 are formed on the firstsubstrate 1, as shown in FIG. 7 and FIG. 8.

FIG. 9 is a plan view after a second patterning process of the firstTFT-LCD assembly substrate in the liquid crystal display according tothe first embodiment of the present invention, showing the structure ofseveral pixel regions, and FIG. 10 is a sectional view taken along lineA3-A3 in FIG. 9, and FIG. 11 is a sectional view taken along line B3-B3in FIG. 9.

On the substrate with the pattern shown in FIG. 7, a gate insulatinglayer, a semiconductor thin film, a doped semiconductor thin film and asource/drain metal thin film are firstly deposited, and then, by apatterning process using a half-tone mask or a gray-tone mask, the firstactive layer, the first data line 12, the first shield line 13, thefirst source electrode 34, the first drain electrode 35 and the firstTFT channel region are formed, as shown in FIG. 9 to FIG. 11.

This patterning process is a multiple-step etching process, comprisingthe following steps: firstly, the gate insulating layer 31, asemiconductor thin film and a doped semiconductor thin film aresequentially deposited by a plasma enhanced chemical vapor deposition(PECVD) method, and then, a source/drain metal thin film is deposited bya magnetron sputtering method or a thermal evaporation method. Aphotoresist layer is coated on the source/drain metal thin film, and thephotoresist layer is exposed by using a half-tone mask or a gray-tonemask and developed to form a photoresist-completely-retained region, aphotoresist-partially-retained region and aphotoresist-completely-removed region. Thephotoresist-completely-retained region corresponds to the region inwhich the first data line, the first shield line, the first sourceelectrode and the first drain electrode are positioned, and thephotoresist-partially-retained region corresponds to the region in whichthe TFT channel region between the first source electrode and the firstdrain electrode is positioned, and the photoresist-completely-removedregion corresponds to the rest region. After the developing process isperformed, the thickness of the photoresist in thephotoresist-completely-retained region is not substantially changed, andthe thickness of the photoresist in the photoresist-partially-retainedregion is decreased, and the photoresist in thephotoresist-completely-removed region is completely removed. By a firstetching process, the source/drain metal thin film, the dopedsemiconductor thin film and the semiconductor thin film in thephotoresist-completely-removed region are etched away to form the firstactive layer, the first data line 12 and the first shield line 13. By anashing process, the photoresist in the photoresist-partially-retainedregion is removed to expose the source/drain metal thin film in thisregion, and the photoresist in the photoresist-completely-retainedregion is reduced in thickness. By a second etching process, thesource/drain metal thin film and the doped semiconductor thin film inthe photoresist-partially-retained region are etched away and thesemiconductor thin film in this region is partially etched away to formthe first source electrode 34, the first drain electrode 35 and thefirst TFT channel region. Finally, the remaining photoresist is removedto complete this patterning process.

After the above patterning process, a plurality of combination pixelregions are defined by the intersection of the first gate lines 11 andthe first data lines 12, and each combination pixel region is divided byone first shield line 13 into a first pixel region and a second pixelregion, and the active layer (comprises the semiconductor layer 32 andthe doped semiconductor layer 33) is formed over the portion of thefirst gate line 11 acting as the first gate electrode, and the firstsource electrode 34 and the first drain electrode 35 are formed on thedoped semiconductor layer 33. One end of the first source electrode 34is positioned above the first gate line 11 and the other end thereof isconnected with the first data line 12, and one end of the first drainelectrode 35 is positioned above the first gate line 11 and disposedopposite to the first source electrode 34. The first TFT channel regionis formed between the first source electrode 34 and the first drainelectrode 35, and the doped semiconductor layer 33 of the first TFTchannel region is etched away and the semiconductor layer 32 thereof ispartially etched away in a thickness direction, so that thesemiconductor layer 32 of the TFT channel region is exposed. Further,the semiconductor thin film and the doped semiconductor thin film areretained below the first data line 12, the first shield line 13, thefirst source electrode 34 and the first drain electrode 35.

FIG. 12 is a plan view after a third patterning process of the firstTFT-LCD assembly substrate in the liquid crystal display according tothe first embodiment of the present invention, showing the structure ofseveral pixel regions, and FIG. 13 is a sectional view taken along lineA4-A4 in FIG. 12 and FIG. 14 is a sectional view taken along line B4-B4in FIG. 12.

On the substrate with the patterns shown in FIG. 9, a passivation layer36 is deposited by a PECVD method, and the passivation layer 36 ispatterned by using a normal mask, and then a first passivation layer viahole 37 is formed above the first drain electrode 35, as shown in FIGS.12 to 14. In this patterning process, gate line connecting via holes ofa gate line pad region and data line connecting via holes of a data linepad region are simultaneously formed, and the process in which the gateline connecting via holes and the data line connecting via holes areformed by the patterning process have been widely used, so it isomitted.

Finally, on the substrate with the patterns shown in FIG. 12, atransparent conductive thin film is deposited by a magnetron sputteringmethod or a thermal evaporation method, and the first pixel electrode 15and the first common electrode 16 are formed by a pattering processusing a normal mask. As shown, the first pixel electrode 15 is formedwithin the first pixel region and connected with the first drainelectrode 35 through the first passivation layer via hole 37, while anedge of the first pixel electrode 15 is superposed on the first shieldline 13 so that the first pixel electrode 15 overlaps the first shieldline 13, and thus, the light leakage can be effectively prevented;further the first pixel electrode and the first shield line constitutestorage capacitor, so the first shield line of the present embodimentalso acts as a storage electrode. As shown, the first common electrode16 is formed in the second pixel region adjacent to the first pixelregion, and the first common electrodes 16 located in the same columnare connected to each other, as shown in FIGS. 1 to 3.

The above mentioned is a method in which the first TFT-LCD assemblysubstrate is manufactured by the 4-mask process employing a half-tonemask or a gray-tone mask. However, the manufacture of the first TFT-LCDassembly substrate can be completed by a 5-mask process employing anormal mask, in which the above second patterning process employing thehalf-tone mask or the gray-tone mask is separated into two patteringprocesses each using a normal mask, that is, the first active layer andthe like are formed by one pattering process using a normal mask and thefirst data line, the first shield line, the first source electrode, thefirst drain electrode and the first TFT channel region are formed by theother pattering process using a noinial mask.

As shown in FIGS. 4 to 6, processes for manufacturing the second TFT-LCDassembly substrate in the liquid crystal display according to the firstembodiment of the present invention include the manufacture of the colorfilter structure layer and the array structure layer. The manufacture ofthe color filter structure layer includes manufacturing the color filterpattern 3 and the first black matrix 4, and the specific steps comprisethe following: firstly, the first black matrix 4 is formed on the secondsubstrate 2, and then, a red color filter material layer is coated onthe second substrate 2 formed with the first black matrix 4 and, then,is exposed with a normal mask so that the red color filter materiallayer is formed into a completely-retained region and acompletely-removed region. After the developing process is performed,the red color filter material layer in the completely-removed region iscompletely removed and the red color filter material layer in thecompletely-retained region is completely remained, and after the bakingprocess, the red color filter pattern is formed. With the same method, apattern of blue color filters and a pattern of green color filters aresubsequently formed, and the red color filter pattern, the blue colorfilter pattern and the blue color filter pattern constitute the colorfilter pattern 3. The formation of the color filter pattern in the threeprimary colors may be an arbitrary sequence, and the sequence of theformation of the first black matrix 4 and the formation of the colorfilter pattern 3 may be reversed also. Subsequently, the array structurelayer is formed on the color filter structure layer, and themanufacturing process of the array structure layer may be the same asthat of the array structure layer in the first TFT-LCD assemblysubstrate. The color filter structure layer may be disposed at otherpositions as necessary. For example, the color filter structure layermay be formed above the passivation layer, that is, the color filterstructure layer is formed after the formation of the passivation layer,and then, a second passivation layer via hole is formed, and finally,the second pixel electrode and the second common electrode are formed.

The common electrodes are formed on both of the first TFT-LCD assemblysubstrate and the second TFT-LCD assembly substrate of the presentembodiment and the common electrodes on the two assembly substrates maybe connected with each other in various manners. For example, the commonelectrodes on each TFT-LCD assembly substrate may be connected with aconnection line provided at in the periphery and then may be furtherconnected to a PCB board through a flexible substrate, so that thecommon electrodes on the two TFT-LCD assembly substrates can beconnected together on the PCB board. Or, for example, the commonelectrodes on the two TFT-LCD assembly substrates may be connectedtogether by a transparent conductive line disposed at in the periphery,and then, are connected to PCB boards through one or more connectionlines. At present, periphery circuits of a liquid crystal display arraysubstrate (having 1024×768 pixel regions for example) are generallyconfigured as the following: 768 gate lines are divided into threeregions (there are 256 gate lines in each region) and connected to atiming controller by a flexible PCB board; 3072 data lines (1024×3) aredivided into eight regions (there are 384 data lines in each region) andconnected to a timing controller by a flexible PCB board. For thepresent embodiment (1024×768 pixel regions for example), there are 768gate lines on each of the two TFT-LCD assembly substrates and the 768gate lines are divided into three regions to connect to a PCB boardthrough a flexible substrate, and there are 1536 data lines (1024×3/2)on each of the two TFT-LCD assembly substrate and the 1536 data lines oneach TFT-LCD assembly substrate may be divided into three regions basedon odd or even number to connect to a timing controller through aflexible substrate.

The embodiment of the present invention provides a liquid crystaldisplay, which is formed by assembling together two TFT-LCD assemblysubstrates each formed with both the array structure pattern and thecommon electrode pattern, and the array structure pattern on one TFT-LCDassembly substrate is not opposite to the array structure pattern on theother TFT-LCD assembly substrate after the assembling process, and thearray structure pattern on one TFT-LCD assembly substrate corresponds tothe common electrode pattern on the other TFT-LCD assembly substrate.Because the shield lines on one TFT-LCD assembly substrate correspond tothe shield lines on the other TFT-LCD assembly substrate, and for thefirst and second shield lines corresponding to each other, the firstshield line can overlap the first pixel electrode on one side of thefirst shield line, and the second shield line can overlap the secondpixel electrode on the other side of the second shield line (that is,the other side of the first shield line), the light leakage on bothsides of the shield lines is prevented as a whole, and thus, theaperture ratio of the liquid crystal display is effectively improved.

FIG. 15 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a second embodiment of the presentinvention, and FIG. 16 is a plan view showing a second TFT-LCD assemblysubstrate in the liquid crystal display according to the secondembodiment of the present invention. As shown in FIGS. 15 and 16, themain structure of the liquid crystal display of the present embodimentcomprises the first TFT-LCD assembly substrate and the second TFT-LCDassembly substrate assembled together with a liquid crystal interposedtherebetween.

The first TFT-LCD assembly substrate comprises a plurality of first gatelines 11, a plurality of first data lines 12 and a plurality of firstshield lines 13, which are all formed on a first substrate. The firstshield lines 13 are parallel to the first gate lines 11 and each betweentwo adjacent first gate lines 11. Two adjacent first gate lines 11 andtwo adjacent first data lines 12 cross each other to define combinationpixel regions. Each combination pixel region is divided by one firstshield line 13 into a first pixel region and a second pixel regionjuxtaposed along a longitudinal direction. There are a first thin filmtransistor 14 and a first pixel electrode 15 formed as the arraystructure pattern within the first pixel region, and there is a firstcommon electrode 16 provided within the second pixel region. The firstcommon electrodes 16 located in the same row are connected to eachother. The first shield lines 13 functions as a black matrix. In thecase where the pixel regions are defined into odd rows of pixel regionsand even rows of pixel regions, the first pixel regions of the firstTFT-LCD assembly substrate according to the present embodiment is, forexample, located in an even row and the second pixel region is, forexample, located in an odd row, that is, the first thin film transistors14 and the first pixel electrodes 15 are formed within an even row ofpixel regions, and the first common electrodes 16 are formed within anodd column of pixel regions.

The main structure of the second TFT-LCD assembly substrate comprises acolor filter structure layer and an array structure layer. The colorfilter structure layer comprises a color filter pattern and a firstblack matrix 4, which are all formed on a second substrate. The colorfilter pattern comprise a red color filter pattern, a green color filterpattern and a blue color filter pattern in a matrix, and the first blackmatrix 4 is disposed to correspond to the second data line 22, and inparticularly, the first black matrix 4 is positioned below the seconddata line 22. The array structure layer comprises a plurality of secondgate lines 21, a plurality of second data lines 22 and a plurality ofsecond shield lines 23, which are all formed on the color filterstructure layer. The second shield lines 23 are parallel to the secondgate lines 21 and each positioned between two adjacent second gate lines21. Two adjacent second gate lines 21 and two adjacent second data lines22 cross each other to define combination pixel regions. Eachcombination pixel region is divided by one second shield line 23 into athird pixel region and a fourth pixel region juxtaposed along alongitudinal direction. A second common electrode 26 is provided withinthe third pixel region, and the second common electrodes 26 located inthe same row are connected to each other. A second thin film transistor24 and a second pixel electrode 25 are formed as the array structurepattern within the fourth pixel region and the second shield line 23functions as a black matrix. In the case where the pixel regions aredefined into odd rows of pixel regions and even rows of pixel regions,the third pixel region of the second TFT-LCD assembly substrateaccording to the present embodiment is, for example, located in an evenrow and the fourth pixel region is, for example, located in an odd row,that is, the second common electrodes 26 is formed within an even columnof pixel regions, and the second thin film transistors 24 and the secondpixel electrodes 25 are formed within an odd row of pixel regions.

The structures of the first thin film transistor, the first pixelelectrode, the first common electrode, the second thin film transistor,the second pixel electrode and the second common electrode of thepresent embodiment are the same as those of the first embodimentmentioned above, and block strips may be further disposed on one side orboth sides of the first gate line, the first data line, the second gateline and the second data line.

In the liquid crystal display of the present embodiment, the structureafter the assembling process of the first TFT-LCD assembly substrate andthe second TFT-LCD assembly substrate is the same as that of theprevious first embodiment, that is, the gate lines, the data lines andthe shield lines on the two TFT-LCD assembly substrates are disposedopposite to each other, respectively; the array structure pattern on oneTFT-LCD assembly substrate corresponds to the common electrode patternon the other TFT-LCD assembly substrate.

As can be seen from the above mentioned structure, in the liquid crystaldisplay of the present invention, by disposing both the array structurepattern and the common electrode pattern on each of two TFT-LCD assemblysubstrates and by assembling the two TFT-LCD assembly substrates so thatthe array structure patterns on the two TFT-LCD assembly substrates arenot disposed opposite to each other, but the array structure pattern onone TFT-LCD assembly substrate corresponds to the common electrodepattern on the other TFT-LCD assembly substrate. Thus, the apertureratio of the liquid crystal display is effectively improved. Likewise,by taking 1024×768 pixel regions as a example, there are 768 gate linesformed on the conventional array substrate, and the width of one gateline is usually 10˜11 micrometer and the width of one data line is 5.5˜6micrometer. Since the number of the gate lines on each TFT-LCD assemblysubstrate is reduced by half, the gate lines on the two TFT-LCD assemblysubstrates are disposed opposite to each other and only one shield linewith a width of 5.5˜6 micrometer is disposed between two adjacent gatelines, the effective width of the gate line is decreased and theaperture ratio of the liquid crystal display is increased by about 20%.

FIG. 17 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a third embodiment of the presentinvention, and FIG. 18 is a sectional view taken along line E1-E1 inFIG. 17; FIG. 19 is a plan view showing a second TFT-LCD assemblysubstrate in the liquid crystal display according to the thirdembodiment of the present invention, and FIG. 20 is a sectional viewtaken along line F1-F1 in FIG. 19.

The present embodiment is a modification of the structure of theprevious first embodiment, in which the shield line of the firstembodiment is displaced by a second black matrix disposed on the secondTFT-LCD assembly substrate. The main structure of the first TFT-LCDassembly substrate is substantially the same as that of the firstTFT-LCD assembly substrate of the previous first embodiment, and thedifference lies in that, in the present embodiment, a first pixelelectrode 15 in a first pixel region is spaced apart from a first commonelectrode 16 in a second pixel region with a predetermined interval,that is, there is not one first shield line disposed between the firstpixel region and the second pixel region. Further, the first pixelelectrode 15 and the first gate line 11 may constitute storagecapacitor. The main structure of the second TFT-LCD assembly substrateis substantially the same as that of the second TFT-LCD assemblysubstrate of the previous first embodiment, and the difference lies inthat, in the present embodiment, a second pixel electrode 25 in a fourthpixel region is spaced apart from a second common electrode 26 in athird pixel region with a predetermined interval, that is, there is asecond black matrix 5 but not a second shield line disposed between thethree pixel region and the fourth pixel region. Specifically, the secondblack matrix 5 is disposed between two adjacent second data lines, thatis, the second black matrix 5 is disposed between the third pixel regionand the fourth pixel region in the combination pixel region to shield agap between the second pixel electrode 25 and second common electrode 26(between the first pixel electrode 15 and the first common electrode 16)in the combination pixel region, and the second pixel electrode 25 andthe first gate line 21 may constitute storage capacitor.

FIG. 21 is a plan view showing a first TFT-LCD assembly substrate in aliquid crystal display according to a fourth embodiment of the presentinvention, and FIG. 22 is a sectional view taken along line G1-G1 inFIG. 21; FIG. 23 is a plan view showing a second TFT-LCD assemblysubstrate in the liquid crystal display according to the fourthembodiment of the present invention, and FIG. 24 is a sectional viewtaken along line H1-H1 in FIG. 23.

The present embodiment provided with block strips is a modification ofthe structure of the previous first embodiment. The main structure ofthe first TFT-LCD assembly substrate is substantially the same as thatof the first TFT-LCD assembly substrate of the previous firstembodiment, and the difference lies in that a first block strip 17 isdisposed on each side of the first data line 12 of the presentembodiment, and the first block strip 17 is used to shield a gap betweenthe first data line 12 and the first pixel electrode 15 or between thefirst data line 12 and the first common electrode 16 in order to preventlight leakage. The first block strip 17 and the first gate line 11 maybe disposed in the same layer in a same patterning process.

The main structure of the second TFT-LCD assembly substrate issubstantially the same as that of the second TFT-LCD assembly substrateof the previous first embodiment, and the difference lies in that in thepresent embodiment, a second block strip 27 is disposed for a seconddata line 22 of the present embodiment, and the second block strip 27 isused to shield a gap between the second data line 22 and the secondpixel electrode 25 or between the second data line 22 and the secondcommon electrode 26 in order to prevent light leakage. The second blockstrip 27 and the second gate line 21 may be disposed in the same layerin a same patterning process.

In the present embodiment, the aperture ratio can be further increased.By taking 1024×768 pixel regions as a example, there are totally 3072gate lines formed on the conventional array substrate, and the width ofone data line is usually 5.5˜6 micrometer, the width of one block stripon each side of the data line is 3˜4 micrometer, and a distance betweenthe data line and the block strip is 2˜3 micrometer, and thus, theeffective width of one data line is up to 15˜20 micrometer. Since thenumber of the data line on each TFT-LCD assembly substrate of thepresent embodiment is reduced by half, and the data lines on the twoTFT-LCD assembly substrates are disposed opposite to each other and oneshield line with a width of 5.5˜6 micrometer are disposed between twoadjacent data lines, the effective width of the data line is decreasedand the aperture ratio of the liquid crystal display is increased byabout 30%.

It should be noted that, a new solution may be formed by combing theprevious embodiments, for example, the shield line and the second blackmatrix may be simultaneously provided.

The TFT-LCD assembly substrate according to the embodiments of thepresent invention may be manufacturing by the following method. Themethod may comprise the following steps.

Step 1, forming gate lines, data lines and thin film transistors on asubstrate, wherein a combination pixel region defined by one gate lineand one data line comprises two juxtaposed pixel regions;

Step 2, forming a pixel electrode and a common electrode for eachcombination pixel region, wherein the pixel electrode is positioned inone pixel region and connected with a drain electrode of the thin filmtransistor and the common electrode is positioned in the other pixelregion.

A first example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention maycomprise the following steps:

Step 11, depositing a gate metal thin film on a substrate and forminggate lines by a patterning process;

Step 12, depositing a gate insulating layer, a semiconductor thin film,a doped semiconductor thin film and a source/drain metal thin film onthe substrate after step 11, and forming data lines, shield lines and anactive layer, a source electrode, a drain electrode and a TFT channelregion for each TFT by a patterning process, wherein one shield line ispositioned between two adjacent data lines and divides the combinationpixel region defined by one gate line and one data line into two pixelregions juxtaposed in a transverse direction;

Step 13, depositing a passivation layer on the substrate after step 12,and forming passivation layer via holes by a patterning process, each ofwhich is positioned above the drain electrode of each TFT;

Step 14, depositing a transparent conductive film on the substrate afterstep 13, and forming a pixel electrode and a common electrode for eachcombination pixel region by a patterning process, wherein the pixelelectrode is positioned in one pixel region and connected with the drainelectrode through the passivation layer via hole, and the commonelectrode is positioned in the other pixel region, and wherein thecommon electrodes in the same column are connected to each other.

The present example provides the method of manufacturing the TFT-LCDassembly substrate, and the number of the data lines on each substrateis reduced by half by forming both the array structure pattern and thecommon electrode pattern on the substrate, and thus, the aperture ratioof the liquid crystal display can be effectively improved. Themanufacturing method of the present example may be adopted tomanufacture the first TFT-LCD assembly substrate in the liquid crystaldisplay according to the first embodiment of the present invention, andthe manufacturing process thereof has been in detail described withreference to FIGS. 7 to 14. It should be noted that the second patteringprocess (step 12) of the present example may be performed not only by1-mask process with a half-tone mask or a gray-tone mask but also by2-mask process with normal masks. In addition, in step 11 of the presentexample, a block strip may be further formed.

A second example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention maycomprise the following steps:

Step 21, depositing a gate metal thin film on a substrate and forminggate lines and shield lines by a patterning process, wherein one shieldline is positioned between two adjacent gate lines;

Step 22, depositing a gate insulating layer, a semiconductor thin film,a doped semiconductor thin film and a source/drain metal thin film onthe substrate after step 21, and forming data lines and an active layer,a source electrode, a drain electrode and a TFT channel region of eachTFT by a patterning process, wherein one shield line divides acombination pixel region defined by one gate line and one data line intotwo pixel regions juxtaposed in a longitudinal direction;

Step 23, depositing a passivation layer on the substrate after step 22,and forming passivation layer via holes by a patterning process, each ofwhich is positioned above the drain electrode of each TFT;

Step 24, depositing a transparent conductive film on the substrate afterstep 23, and forming a pixel electrode and a common electrode for eachcombination pixel region by a patterning process, wherein the pixelelectrode is positioned in one pixel region and connected with the drainelectrode through the passivation layer via hole, and wherein the commonelectrode is positioned in the other pixel region and the commonelectrodes in the same row are connected to each other.

The present example provides the method of manufacturing the TFT-LCDassembly substrate, and the number of the gate lines on each substrateis reduced by half by forming both the array structure pattern and thecommon electrode pattern on the substrate, and thus, the aperture ratioof the liquid crystal display can be effectively improved. Themanufacturing method of the present example may be adopted tomanufacture the first TFT-LCD assembly substrate in the liquid crystaldisplay according to the second embodiment of the present invention, andthe manufacturing process thereof can be performed as described in thefirst example.

A third example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention maycomprise the following steps:

Step 31, forming a color filter structure layer comprising a colorfilter pattern and a first black matrix on a substrate;

Step 32, depositing a gate metal thin film on the substrate after step31, and forming gate lines by a patterning process;

Step 33, depositing a gate insulating layer, a semiconductor thin film,a doped semiconductor thin film and a source/drain metal thin film onthe substrate after step 32, and forming data lines, shield lines and anactive layer, a source electrode, a drain electrode and a TFT channelregion of each TFT by a patterning process, wherein one shield line ispositioned between two adjacent data lines and divides a combinationpixel region defined by one gate line and one data line into two pixelregions juxtaposed in a transverse direction;

Step 34, depositing a passivation layer on the substrate after step 33,and forming passivation layer via holes by a patterning process, each ofwhich is positioned above the drain electrode of each TFT;

Step 35, depositing a transparent conductive film on the substrate afterstep 34, and forming a pixel electrode and a common electrode for eachcombination pixel region by a patterning process, wherein the pixelelectrode is positioned in one pixel region and connected with the drainelectrode through the passivation layer via hole, and wherein the commonelectrode is positioned in the other pixel region and the commonelectrodes in the same column are connected to each other.

The present example is a modification of a solution of the previousfirst example of the method of manufacturing the TFT-LCD assemblysubstrate, and the difference lies in that the color filter structurelayer is further formed. The present example may be adopted tomanufacture the second TFT-LCD assembly substrate in the liquid crystaldisplay according to the first embodiment of the present invention. Itshould be noted that the color filter structure layer may be disposed atother position as necessary, for example, the color filter structurelayer may be formed above the passivation layer.

A fourth example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention maycomprise the following steps:

Step 41, forming a color filter structure layer comprising a colorfilter pattern and a first black matrix on a substrate;

Step 42, depositing a gate metal thin film on the substrate after step41, and forming gate lines and shield lines by a patterning process,wherein one shield line is positioned between two adjacent gate lines;

Step 43, depositing a gate insulating layer, a semiconductor thin film,a doped semiconductor thin film and a source/drain metal thin film onthe substrate after the step 42, and forming data lines and an activelayer, a source electrode, a drain electrode and a TFT channel region ofeach TFT by a patterning process, wherein one shield line divides acombination pixel region defined by one gate line and one data line intotwo pixel regions juxtaposed in a longitudinal direction;

Step 44, depositing a passivation layer on the substrate after step 43,and forming passivation layer via holes by a patterning process, each ofwhich is positioned above the drain electrode of each TFT;

Step 45, depositing a transparent conductive film on the substrate afterstep 44, and forming a pixel electrode and a common electrode for eachcombination pixel region by a patterning process, wherein the pixelelectrode is positioned in one pixel region and connected with the drainelectrode through the passivation layer via hole, and wherein the commonelectrode is positioned in the other pixel region and the commonelectrodes in the same row are connected to each other.

The present example is a modification of a solution of the previoussecond example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention, and thedifference lies in that the color filter structure layer is furtherformed. The present example may be adopted to manufacture the secondTFT-LCD assembly substrate in the liquid crystal display according tothe second embodiment of the present invention. Likewise, the colorfilter structure layer may be disposed at other position as necessary,for example, the color filter structure layer may be formed above thepassivation layer.

A fifth example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention maycomprise the following steps:

Step 51, depositing a gate metal thin film on the substrate and forminggate lines by a patterning process;

Step 52, depositing a gate insulating layer, a semiconductor thin film,a doped semiconductor thin film and a source/drain metal thin film onthe substrate after the step 51, and forming data lines and an activelayer, a source electrode, a drain electrode and a TFT channel region ofeach TFT by a patterning process, wherein a combination pixel regiondefined by one gate line and one data line comprises two juxtaposedpixel regions;

Step 53, depositing a passivation layer on the substrate after step 52,and forming passivation layer via holes by a patterning process, each ofwhich is positioned above the drain electrode of each TFT;

Step 54, depositing a transparent conductive film on the substrate afterstep 53, and forming a pixel electrode and a common electrode for eachcombination pixel region by a patterning process, wherein the pixelelectrode is positioned in one pixel region and connected with the drainelectrode through the passivation layer via hole, and wherein the commonelectrode is positioned in the other pixel region and the commonelectrodes in the same column or the same row are connected to eachother.

The present example is a modification of the previous first example andsecond example and may be adopted to manufacture the first TFT-LCDassembly substrate in the liquid crystal display according to the thirdembodiment of the present invention.

A sixth example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention maycomprise the following steps:

Step 61, forming a color filter structure layer comprising a colorfilter pattern, a first black matrix and a second black matrix on asubstrate;

Step 62, depositing a gate metal thin film on the substrate after step61 and forming gate lines by a patterning process;

Step 63, depositing a gate insulating layer, a semiconductor thin film,a doped semiconductor thin film and a source/drain metal thin film onthe substrate after the step 62, and forming data lines and an activelayer, a source electrode, a drain electrode and a TFT channel region ofeach TFT by a patterning process, wherein a combination pixel regiondefined by one gate line and one data line comprises two juxtaposedpixel regions;

Step 64, depositing a passivation layer on the substrate after step 63,and forming passivation layer via holes by a patterning process, each ofwhich is positioned above the drain electrode of each TFT;

Step 65, depositing a transparent conductive film on the substrate afterstep 64, and forming a pixel electrode and a common electrode for eachcombination pixel region by a patterning process, wherein the pixelelectrode is positioned in one pixel region and connected with the drainelectrode through the passivation layer via hole, and wherein the commonelectrode is positioned in the other pixel region and the commonelectrodes in the same column or the same row are connected to eachother.

The present example is a modification of the previous third example andfourth example and may be adopted to manufacture the second TFT-LCDassembly substrate in the liquid crystal display according to the thirdembodiment of the present invention.

The liquid crystal display of the embodiments of the present inventionmay be manufactured by the following manufacturing method. The methodmay comprise:

Step 100, manufacturing a first TFT-LCD assembly substrate and a secondTFT-LCD assembly substrate, wherein the first TFT-LCD assembly substratecomprises first gate lines and data lines formed on a first substrateand defined combination pixel regions, wherein one combination pixelregion comprises two pixel regions, and in one pixel region are formed afirst thin film transistor and a first pixel electrode and in the otherpixel region is formed a first common electrode; the second TFT-LCDassembly substrate comprises a color filter structure layer and an arraystructure layer, wherein the array structure layer comprises second gatelines and second data lines formed on a second substrate and definedcombination pixel regions, and the combination pixel region comprisestwo pixel regions, and in one pixel region is formed a second commonelectrode and in the other pixel region are formed a second thin filmtransistor and a second pixel electrode;

Step 200, assembling the first TFT-LCD assembly substrate and the secondTFT-LCD assembly substrate together, wherein the first gate lines andthe second gate lines, the first data lines and the second data lines,the first pixel electrodes and the second common electrodes, the firstcommon electrodes and the second pixel electrodes are respectivelydisposed opposite to each other.

Embodiments of the present invention provide a method for manufacturingthe liquid crystal display, in which the liquid crystal display isformed by assembling two TFT-LCD assembly substrates each formed withboth the array structure pattern and the common electrode pattern, andthe array structure patterns on the two TFT-LCD assembly substrates arenot opposite to each other after the assembling process, and the arraystructure pattern on one TFT-LCD assembly substrate corresponds to thecommon electrode pattern on the other TFT-LCD assembly substrate, andthus, the aperture ratio of the liquid crystal display can beeffectively improved. The liquid crystal display according to theembodiments of the present invention may be manufactured by employingrespective example of the method of manufacturing the TFT-LCD assemblysubstrate according to the embodiments of the present invention.

It should be appreciated that the embodiments described above areintended to illustrate but not limit the present invention. Although thepresent invention has been described in detail herein with reference tothe preferred embodiments, it should be understood by those skilled inthe art that the present invention can be modified and some of thetechnical features can be equivalently substituted without departingfrom the spirit and scope of the present invention.

What is claimed is:
 1. A thin film transistor liquid crystal display(TFT-LCD) assembly substrate, comprising: an array structure layer,comprising: a plurality of first signal lines; and a plurality of secondsignal lines, wherein adjacent first signal lines and adjacent secondsignal lines cross each other to define a plurality of combination pixelregions, and each of the combination pixel regions comprises two pixelregions juxtaposed along a direction of the first signal line, and thereare a thin film transistor and a pixel electrode formed in one pixelregion of the two pixel regions and there is a common electrode formedin the other pixel region.
 2. The TFT-LCD assembly substrate as claimedin claim 1, wherein the common electrodes adjacent to each other in adirection of the second signal line are connected with each other. 3.The TFT-LCD assembly substrate as claimed in claim 1, further comprisingshield lines each disposed between two adjacent second signal lines,wherein the two pixel regions of each combination pixel region arespaced apart by one shield line.
 4. The TFT-LCD assembly substrate asclaimed in claim 3, wherein the shield lines partially overlap the pixelelectrode in each combination pixel region.
 5. The TFT-LCD assemblysubstrate as claimed in claim 1, wherein the two pixel regions of eachcombination pixel region are spaced apart by a gap formed between twoadjacent second signal lines.
 6. The TFT-LCD assembly substrate asclaimed in claim 5, further comprising a black matrix, which is disposedto correspond to the gap between the two pixel regions of eachcombination pixel region.
 7. The TFT-LCD assembly substrate as claimedin claim 1, further comprising a color filter structure layer, whereinthe color filter structure layer is formed above or below the arraystructure layer.
 8. The TFT-LCD assembly substrate as claimed in claim7, wherein the color filter structure layer comprises a plurality ofcolor filter units each corresponding to one pixel region of eachcombination pixel region.
 9. A method of manufacturing a thin filmtransistor liquid crystal display (TFT-LCD) assembly substrate,comprising: Step 1, forming an array structure layer on a substrate,comprising forming a plurality of first signal lines, a plurality ofsecond signal lines and a plurality of thin film transistors, andadjacent first signal lines and adjacent second signal lines cross eachother to define a plurality of combination pixel regions, and each ofthe combination pixel regions comprises two pixel regions juxtaposedalong a direction of the first signal line; and Step 2, forming a pixelelectrode and a common electrode for each combination pixel region,wherein the pixel electrode is positioned in the same one pixel regionas one of the thin film transistors and connected with one of a drainelectrode and a source electrode of the thin film transistor, and thecommon electrode is positioned in the other pixel region.
 10. The methodof manufacturing a TFT-LCD assembly substrate as claimed in claim 9,wherein in the step 1, further forming shield lines each providedbetween two adjacent the second signal lines, and wherein the two pixelregions of each combination pixel regions are spaced apart by one shieldline.
 11. The method of manufacturing a TFT-LCD assembly substrate asclaimed in claim 10, wherein the shield lines partially overlap thepixel electrode in each combination pixel region.
 12. The method ofmanufacturing a TFT-LCD assembly substrate as claimed in claim 9,wherein in the step 2, further forming a gap between the pixel electrodeand the common electrode of each combination pixel region, and whereinthe gap is positioned between two adjacent second signal lines andseparates the two pixel regions.
 13. The method of manufacturing aTFT-LCD assembly substrate as claimed in claim 12, further comprisingforming a black matrix to correspond to the gap between the two pixelregions of each combination pixel region.
 14. The method ofmanufacturing a TFT-LCD assembly substrate as claimed in claim 9,further comprising forming a color filter structure layer before theforming of the array structure layer, and wherein the color filterstructure layer comprises a plurality of color filter units eachcorresponding to one pixel region of each combination pixel region. 15.The method of manufacturing a TFT-LCD assembly substrate as claimed inclaim 9, further comprising forming a color filter structure layer afterthe forming of the array structure layer, and wherein the color filterstructure layer comprise a plurality of color filter units eachcorresponding to one pixel region of each combination pixel region. 16.A liquid crystal display, comprising: a first thin film transistorliquid crystal display (TFT-LCD) assembly substrate and a second TFT-LCDassembly substrate that are assembled together, wherein the firstTFT-LCD assembly substrate comprises: an array structure layer, whereinthe array structure layer comprises a plurality of first signal linesand a plurality of second signal lines, and adjacent the first signallines and adjacent the second signal lines cross each other to define aplurality of combination pixel regions, and each of the combinationpixel regions comprises two pixel regions juxtaposed along a directionof the first signal line, and there are a thin film transistor and apixel electrode formed in one pixel region of the two pixel regions andthere is a common electrode formed in the other pixel region; and thesecond TFT-LCD assembly substrate comprises: a color filter structurelayer; and an array structure layer, wherein the color filter structurelayer comprises a color filter unit, and the array structure layercomprises a plurality of third signal lines and a plurality of fourthsignal lines, and adjacent the third signal lines and adjacent thefourth signal line cross each other to define a plurality of combinationpixel regions, and each of the combination pixel regions comprises twopixel regions juxtaposed along a direction of the third signal line, andthere are a thin film transistor and a pixel electrode formed in onepixel region of the two pixel regions and there is a common electrodeformed in the other pixel region; and wherein the first signal lines andthe third signal lines, the second signal lines and the fourth signallines, the first pixel electrodes and the second common electrodes, thefirst common electrodes and the second pixel electrodes are disposedopposite to each other, respectively.
 17. The liquid crystal display asclaimed in claim 16, wherein each of the combination pixel regiondefined by one first signal line and one second signal line of the firstTFT-LCD assembly substrate is spaced apart by a first shield linedisposed between two adjacent second signal lines; and each of thecombination pixel region defined by one third signal line and one fourthsignal line of the second TFT-LCD assembly substrate is spaced apart bya second shield line disposed between two adjacent the fourth signallines, and wherein the first shield line is disposed opposite to thesecond shield line.
 18. The liquid crystal display as claimed in claim16, wherein each of the combination pixel region defined by one firstsignal line and one second signal line of the first TFT-LCD assemblysubstrate is spaced apart by a first gap disposed between two adjacentsecond signal lines; and each of the combination pixel region defined byone third signal line and one fourth signal line of the second TFT-LCDassembly substrate is spaced apart by a second gap disposed between twoadjacent fourth signal lines, and wherein the first gap is disposedopposite to the second gap.
 19. The liquid crystal display as claimed inclaim 18, wherein the second TFT-LCD assembly substrate furthercomprises a black matrix to dispose to correspond to the second gapbetween the two pixel regions.
 20. The liquid crystal display as claimedin claim 16, wherein the common electrodes of the first TFT-LCD assemblysubstrate being adjacent to each other in a direction of the secondsignal line are connected with each other; and the common electrodes ofthe second TFT-LCD assembly substrate being adjacent to each other in adirection of the fourth signal line are connected with each other.